Investigation of Molecular beam epitaxial growth of Antiferromagnetic Manganese Gallium Nitride
Abstract
Antiferromagnets(AFMs) are promising material for spintronics applications. Here, we are using MBE to study those properties
Keywords:
Phd, Department of physics, Molecular beam epitaxy(MBE)
Status
G
Department
Physics & Astronomy
College
College of Arts and Sciences
Campus
Athens
Faculty Mentor
Smith, Dr Arthur
Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 4.0 International License.
Investigation of Molecular beam epitaxial growth of Antiferromagnetic Manganese Gallium Nitride
Antiferromagnets(AFMs) are promising material for spintronics applications. Here, we are using MBE to study those properties